https://vital.seals.ac.za/vital/access/manager/Index ${session.getAttribute("locale")} 5 https://vital.seals.ac.za/vital/access/manager/Repository/vital:26433 0.3. The possibility that Si could become a DX-centre in AlxGa1-xN was then investigated. However, Hall effect measurements showed that the Si activation energy increased in good agreement with the model of a shallow effective mass state donor, with no sudden increase in ED being observed up to x = 0.4. It was then suggested that the increase in the E1 and E2 activation energies, as well as the exciton localisation energies, could be due to the 9 7 valence band crossover, which occurs at roughly the same composition. However, due to the scarcity of reports on the valence band structure in AlxGa1-xN no conclusions could be made at this stage as to the effect of the 9 7 valence band crossover on the PL properties of AlxGa1-xN.]]> Thu 13 May 2021 05:42:11 SAST ]]> https://vital.seals.ac.za/vital/access/manager/Repository/vital:10548 Thu 13 May 2021 04:10:03 SAST ]]>