- Title
- Schottky barrier diode parameters of Ag/MgPc/p-Si structure
- Creator
- Canlıca, Mevlüde
- Creator
- Coskun, Mustafa
- Creator
- Altındal, Ahmet
- Creator
- Nyokong, Tebello
- Subject
- To be catalogued
- Date Issued
- 2012
- Date
- 2012
- Type
- text
- Type
- article
- Identifier
- http://hdl.handle.net/10962/245820
- Identifier
- vital:51408
- Identifier
- xlink:href="https://doi.org/10.1142/S1088424612500824"
- Description
- An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V1/2 plots indicated that the thermoionic emission theory can be applied to evaluate junction parameters for the investigated SB diode rather than space-charge limited conduction (SCLC) mechanism and bulk-limited Poole–Frenkel emission. The bulk doping concentration NB and fixed oxide charges Nf was determined from the measured high frequency C-V curve and was found to be 9.5 × 1014 cm-3 and 2.3 × 1013 cm-2, respectively. The values of barrier height obtained from Norde's function were compared with those from the forward bias current-voltage characteristic, and it was seen that there was a good agreement between barrier heights from both methods.
- Format
- computer
- Format
- online resource
- Format
- application/pdf
- Format
- 1 online resource (6 pages)
- Format
- Publisher
- World Scientific Publishing
- Language
- English
- Relation
- Journal of Porphyrins and Phthalocyanines
- Relation
- Canlıca, M., Coşkun, M., Altındal, A. and Nyokong, T., 2012. Schottky barrier diode parameters of Ag/MgPc/p-Si structure. Journal of Porphyrins and Phthalocyanines, 16(07n08), pp.855-860
- Relation
- Journal of Porphyrins and Phthalocyanines volume 16 number 07n08 p. 855 2012 1088-4246
- Rights
- Publisher
- Rights
- Use of this resource is governed by the terms and conditions of the World Scientific Copyright and Permissions Statement (https://0-www.worldscientific.com.wam.seals.ac.za/page/permissions)
- Rights
- Closed Access
- Hits: 586
- Visitors: 645
- Downloads: 66
Collections
RU DST/NRF SARChI for Medicinal Chemistry and Nanotechnology
Nyokong, Tebello (Distinguished Professor)
RU Department of Chemistry
| Thumbnail | File | Description | Size | Format | |||
|---|---|---|---|---|---|---|---|
| View Details Download | SOURCE1 | Schottky barrier diode parameters of Ag.pdf | 762 KB | Adobe Acrobat PDF | View Details Download |