- Title
- Development of MOVPE-grown InAsSb for barrier diode applications
- Creator
- Dobson, Stephen R
- Subject
- Gallium arsenide semiconductors
- Subject
- Electronics
- Date Issued
- 2020
- Date
- 2020
- Type
- Thesis
- Type
- Doctoral
- Type
- DPhil
- Identifier
- http://hdl.handle.net/10948/49071
- Identifier
- vital:41598
- Description
- In this study, layers of GaSb, InAs and InAsSb are grown by metalorganic vapour phase epitaxy and characterised. Growth is conducted using the precursors of trimethylgallium, trimethylindium, trimethylantimony and tertiarybutylarsine. Focus is then placed on the characterisation of the materials, carried out by the techniques of X-ray diffraction, photoluminescence spectroscopy, Hall measurements and photocurrent spectroscopy. It is observed that V/III ratio plays a vital role in the growth of the GaSb and InAsSb layers. Epilayers of GaSb showed best crystalline quality when a V/III ratio of 1.2 was used at a growth temperature of 600 °C and a cell pressure of 600 Torr. Resultant Hall measurements indicated p-type GaSb. The Hall carrier concentrations of the p-type GaSb samples were analyzed considering electrical neutrality conditions and found to be highly compensated with evidence of band impurity conduction at low measurement temperatures. Both the donor and acceptor concentrations were determined to be of the order of 1016 cm−3 for all samples. For low temperature (< 150 K) a monovalent acceptor concentration is calculated to have an activation energy at approximately 20 meV. At high temperature (> 150 K) a divalent acceptor is extracted with an activation energy varying between samples based on compensation in a range of 90 meV to 70 meV. Photoluminescence measurements show four peaks with recombination mechanisms linked to the native acceptor identified in literature as either the gallium antisite and/or vacant gallium site. A fifth peak observed is attributed to the longitudinal phonon of the native acceptor. InAs and InAsSb epilayer are all grown at a temperature of 600 °C and cell pressure of 600 Torr. InAs is grown at a V/III ratio of 9.5 on GaAs substrate. Photoluminescence of the InAs layer shows two distinct peaks, one of which is an extrinsic band to band recombination. The other is attributed to free electron to acceptor or a donor-acceptor pair transition. An additional weak peak is also observed which is assigned to the longitudinal phonon of the band to band. InAsSb growth was conducted under a range of V/III ratios of 4.8 to 5, with a vapour phase composition of 0.4 to 0.435. Structural analysis via X-ray diffraction showed a 6 % to 12 % solid antimony content. Photoluminescence exhibited a single broad peak for all samples, with extended band tails. Temperature and power dependant analysis of luminescence indicated a convolution of extrinsic band to tail and band to band recombinations. Hall measurements indicated the InAsSb was n-type material with an apparent measured maximum mobility at 120 K of 9.5 × 103 cm2/V.s. and a room temperature apparent mobility of 7.5 × 103 cm2/V.s. Analysis of hall results using a two-layer model calculated a true bulk mobility of the epilayer at room temperature with an increased value of 15.4 × 103 cm2/V.s. The two-layer model details the effects of the surface conduction. From photoconductivity measurements and further analysis a resultant effective lifetime, at room temperature, was found to be on same order of magnitude as that of InAs materials. Application of a single Einstein oscillator extrapolated 0 K energy gaps for two samples of solid Sb contents of 6 % and 12 %, of 354 meV and 332 meV, respectively. Finally consideration was given to the growth of aluminium containing compounds, particularly AlGaSb. Multiple phases were observed under scanning electron microscope showing growth of GaSb regions surrounded by amorphous solid aluminium and/or aluminium oxide phases. The failure of the aluminium to incorporate into the desired crystal structure is speculated to be due to impure precursor introducing oxygen into the films. Additionally, the effectiveness of the gallium precursor compared to the aluminium precursor in helping the removal of the methyl groups at the growth surface, could also promote a preference for GaSb growth.
- Format
- viii, 109 leaves
- Format
- Publisher
- Nelson Mandela University
- Publisher
- Faculty of Science
- Language
- English
- Rights
- Nelson Mandela University
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NMU School of Computer Science, Mathematics, Physics and Statistics
| Thumbnail | File | Description | Size | Format | |||
|---|---|---|---|---|---|---|---|
| View Details Download | SOURCE1 | Dobson, S.pdf | 9 MB | Adobe Acrobat PDF | View Details Download |