Thermally-assisted optically stimulated luminescence from deep electron traps in α-Al2O3: C, Mg
- Kalita, Jitumani M, Chithambo, Makaiko L, Polymeris, G S
- Authors: Kalita, Jitumani M , Chithambo, Makaiko L , Polymeris, G S
- Date: 2017
- Language: English
- Type: text , article
- Identifier: http://hdl.handle.net/10962/116133 , vital:34322 , https://doi.org/10.1016/j.nimb.2017.04.075
- Description: We report thermally-assisted optically stimulated luminescence (TA-OSL) in α-Al2O3:C,Mg. The OSL was measured at elevated temperatures between 50 and 240 °C from a sample preheated to 500 °C after irradiation to 100 Gy. That OSL could be measured even after the preheating is direct evidence of the existence of deep electron traps in α-Al2O3:C,Mg. The TA-OSL intensity goes through a peak with measurement temperature. The initial increase is ascribed to thermal assistance to optical stimulation whereas the subsequent decrease in intensity is deduced to reflect increasing incidences of non-radiative recombination, that is, thermal quenching. The activation energy for thermal assistance corresponding to a deep electron trap was estimated as 0.667 ± 0.006 eV whereas the activation energy for thermal quenching was calculated as 0.90 ± 0.04 eV. The intensity of the TA-OSL was also found to increase with irradiation dose. The dose response is sublinear from 25 to 150 Gy but saturates with further increase of dose. The TA-OSL dose response has been discussed by considering the competition for charges at the deep traps. This study incidentally shows that TA-OSL can be effectively used in dosimetry involving large doses.
- Full Text: false
- Date Issued: 2017
- Authors: Kalita, Jitumani M , Chithambo, Makaiko L , Polymeris, G S
- Date: 2017
- Language: English
- Type: text , article
- Identifier: http://hdl.handle.net/10962/116133 , vital:34322 , https://doi.org/10.1016/j.nimb.2017.04.075
- Description: We report thermally-assisted optically stimulated luminescence (TA-OSL) in α-Al2O3:C,Mg. The OSL was measured at elevated temperatures between 50 and 240 °C from a sample preheated to 500 °C after irradiation to 100 Gy. That OSL could be measured even after the preheating is direct evidence of the existence of deep electron traps in α-Al2O3:C,Mg. The TA-OSL intensity goes through a peak with measurement temperature. The initial increase is ascribed to thermal assistance to optical stimulation whereas the subsequent decrease in intensity is deduced to reflect increasing incidences of non-radiative recombination, that is, thermal quenching. The activation energy for thermal assistance corresponding to a deep electron trap was estimated as 0.667 ± 0.006 eV whereas the activation energy for thermal quenching was calculated as 0.90 ± 0.04 eV. The intensity of the TA-OSL was also found to increase with irradiation dose. The dose response is sublinear from 25 to 150 Gy but saturates with further increase of dose. The TA-OSL dose response has been discussed by considering the competition for charges at the deep traps. This study incidentally shows that TA-OSL can be effectively used in dosimetry involving large doses.
- Full Text: false
- Date Issued: 2017
On luminescence stimulated from deep traps using thermally-assisted time-resolved optical stimulation in α-Al2O3: C
- Nyirenda, Angel N, Chithambo, Makaiko L, Polymeris, G S
- Authors: Nyirenda, Angel N , Chithambo, Makaiko L , Polymeris, G S
- Date: 2016
- Language: English
- Type: text , article
- Identifier: http://hdl.handle.net/10962/124627 , vital:35639 , https://doi.org/10.1016/j.radmeas.2016.01.016
- Description: We report a study of charge transfer mechanisms of electrons stimulated optically from very deep traps, also known as donor traps, in α-Al2O3:C. The investigations were carried out using thermally-assisted time-resolved optical stimulation, thermoluminescence and by way of residual thermoluminescence from the main electron trap. When the charges are optically stimulated from the deep traps, they are redistributed via the conduction band to the main electron trap and the shallow trap from where they are optically or thermally released for recombination at luminescence centres. The luminescence is strongly quenched at high measurement temperature as evident by very short luminescence lifetimes at these temperatures. The main peak due to residual thermoluminescence is located at a higher temperature than the conventional main peak.
- Full Text: false
- Date Issued: 2016
- Authors: Nyirenda, Angel N , Chithambo, Makaiko L , Polymeris, G S
- Date: 2016
- Language: English
- Type: text , article
- Identifier: http://hdl.handle.net/10962/124627 , vital:35639 , https://doi.org/10.1016/j.radmeas.2016.01.016
- Description: We report a study of charge transfer mechanisms of electrons stimulated optically from very deep traps, also known as donor traps, in α-Al2O3:C. The investigations were carried out using thermally-assisted time-resolved optical stimulation, thermoluminescence and by way of residual thermoluminescence from the main electron trap. When the charges are optically stimulated from the deep traps, they are redistributed via the conduction band to the main electron trap and the shallow trap from where they are optically or thermally released for recombination at luminescence centres. The luminescence is strongly quenched at high measurement temperature as evident by very short luminescence lifetimes at these temperatures. The main peak due to residual thermoluminescence is located at a higher temperature than the conventional main peak.
- Full Text: false
- Date Issued: 2016
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