- Title
- Characterization of hydrogen and helium implanted silicon carbide
- Creator
- O'Connell, Jacques Herman
- Subject
- Silicon carbide
- Subject
- Hydrogen
- Subject
- Helium
- Date Issued
- 2009
- Date
- 2009
- Type
- Thesis
- Type
- Masters
- Type
- MSc
- Identifier
- vital:10539
- Identifier
- http://hdl.handle.net/10948/979
- Identifier
- Silicon carbide
- Identifier
- Hydrogen
- Identifier
- Helium
- Description
- This dissertation focuses on the characterization of hydrogen implanted 3C-SiC and helium implanted 6H-SiC and the interaction of silver and palladium with the SiC. The main technique used for the analysis of the implanted SiC was transmission electron microscopy (TEM), although scanning electron microscopy (SEM) and nanoindentation hardness testing were also used. Both H and He implantations were done at an ion energy of 100 keV and the total dose for both species was 1017 ions/cm2. Specimens were annealed at 1000 °C for 20 min in an inert atmosphere. The observed depth of ion damage agreed closely with that predicted by TRIM 2008. The damaged region in the He implanted specimens had a high density of small bubbles but no cracks were observed. Severe cracking was observed along the damaged region in the H implanted specimens. A second phase hexagonal (4H-SiC) was detected in two grains in the 3C-SiC and some grown in voids were also observed. The wettability of SiC by a 2:1 by volume mixture of Ag and Pd is extremely low but is significantly increased through the addition of Si to the mixture. The Si containing metal mixture was found to migrate along the grain boundaries of polycrystalline 3CSiC while sealing the point of entry. Pd attacks SiC and severe etching was observed on the surface of 6H-SiC. An epitaxially orientated Pd2Si inclusion was observed in the 6H-SiC. No effect of implantation damage on the interaction of Pd and Ag with SiC was observed. Pd etched the surface of the He implanted 6H-SiC down through the damaged region with no evidence of implantation damage left after 67 hours of annealing and thus no conclusions could be drawn. The metal mixture interacted with the non implanted surface of the H implanted 3C-SiC after dissolving the Si substrate and therefore the effect of the ion damage on the interaction could not be investigated. Nanoindentation hardness measurements showed a marked increase in hardness of He implanted 6H-SiC annealed for 20 min at 1000 °C over that of as implanted and virgin material. There was also a large decrease in hardness corresponding to the depth of the ion damage.
- Format
- v, 110 leaves
- Format
- Publisher
- Nelson Mandela Metropolitan University
- Publisher
- Faculty of Science
- Language
- English
- Rights
- Nelson Mandela Metropolitan University
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