Photoluminescence and electroluminescence imaging of PV devices

Roodt, Roelof Petrus

Title: Photoluminescence and electroluminescence imaging of PV devices
Creator: Roodt, Roelof Petrus
Subject: Photoluminescence
Subject: Biosensors
Date Issued: 2024-04
Date: 2024-04
Type: Master's theses
Type: text
Identifier: http://hdl.handle.net/10948/64333
Identifier: vital:73676
Description: Luminescence imaging has become a particularly useful and valuable tool for the characterisation of photovoltaic devices. This study entailed the design, construction, and optimisation of a system for the electroluminescence (EL) and photoluminescence (PL) imaging of various solar cell devices. The system can perform EL and PL imaging of solar cells of different cell technologies and materials systems, including Si, perovskite, and triple-junction concentrator solar cells. This required appropriate electrical power supplies for carrier injection for EL imaging and optical excitation for PL imaging. The different materials systems also required wavelength appropriate filters for PL imaging. In addition, the system utilized a temperature-controlled sample stage and was placed in a chamber for environmental control and isolation of UV radiation from laboratory. In addition to optimization of imaging conditions, luminescence images need to be optimized to facilitate detailed analysis and the application of appropriate algorithms to extract device parameters and hence generate device parameter images of the devices under investigation. For EL imaging, two power supplies were used to inject current into the solar cells. The reason for the two power supplies is that the first power supply had a current range of ± 1 A and an applied voltage capability of ± 21 V. This was used for the smaller solar cells. It was also convenient to use as the power supply could also measure the injected current and applied voltage and digitally store it with the images. For the larger solar cells, a second power supply was utilized, which could inject current into the samples in the range of ± 12 A at an applied voltage of ± 40 V. To measure the current and voltage of the power supply provided, two digital multimeters were utilized. For acquiring images, the same camera was used for EL and PL imaging. The sensor used in the camera is a silicon CMOS sensor. For PL imaging, four light emitting diode (LED) boards, consisting out of sixty-four LED’s, per board, of four different wavelengths, were used to optically excite the solar cells. The four wavelengths emitted by the LED’s were chosen to match the bandgaps of the different solar cell devices investigated. The LEDs were powered with a multi-channel constant voltage power supply, where the current could be varied. The Si solar cell is a 156 x 156 mm commercial solar cell. The perovskite solar module is a 40 x 40 mm module, which consists out of six cells connected in series. The triple-junction concentrator solar cell has a dimension of 10 x 10 mm which consists of three junctions staked on top of one another. These three layers consist of indium gallium phosphate (InGaP), indium gallium arsenide (InGaAs) and germanium (Ge). To capture EL and PL images of these various solar cell devices, filters of specific wavelengths were placed in front of the camera to isolate the light generated by the different devices. In addition to isolating the luminescence observed from the solar cells, an image correction procedure was adapted from literature, to be applicable to acquiring luminescence images of these various solar cells. As there are a range of factors which influence the quality and clarity of the luminescence images, i.e., chromatic aberration, diffraction, and absorption depth, to name a few, the wavelength dependency of these factors was investigated. This was done by acquiring a point spread function (PSF) for each of these devices and then using these PSF's together with a deconvolution algorithm to correct the luminescence images. The PSF was acquired by fitting a point source emission image to a function that includes exponential and Gaussian terms. The point source image was obtained by placing a black piece of vinyl with a pinhole in it over the solar cell. To communicate with all the various devices and to acquire images at various intensities a LABVIEW program was written. This was used then used to control the power supplies, digital multimeters, camera, and the LED's. This allowed for the user to specify at what points along the current-voltage (I-V) curve data points needed to be measured together with the luminescence images captured. For PL imaging the intensity of the LED's was then also adjusted according to user specified values. The system was utilised to acquire EL images of the Si solar cell, EL and PL images of the perovskite solar cell and EL images of the InGaP and InGaAs layers in the triple-junction concentrator solar cell. With the correction procedure utilised in this study, it was seen that the image quality and clarity improved, compared to the conventional way of capturing luminescence images. These statements are supported by the results obtained for the series resistance maps of the Si solar cell and the perovskite solar module, as the series resistance maps obtained from the corrected luminescence images have less noise and more detail compared to the results from the raw luminescence images. From the EL images captured for the two layers of the triple junction concentrator, it was clear that the intensity profile of the two layers is different, as the intensity for the InGaP layers was that the device had bright edges and darker intensity on the interior where exactly the opposite was observed for the InGaAs layer, having a bright interior and darker edges. This is most likely due to the opto-electric coupling of these layers withing the triple junction solar cell. For the series resistance images obtained for the Si solar cell, it is observed that at lower carrier injection, the series resistance is lower compared to higher carrier injection levels. This result can also be influenced by the increase in cell temperature with the increase in injected carriers. The series resistance maps obtained from the perovskite EL images shows an interesting result. As the perovskite solar cell has degraded, three of the six cells have optically inactive regions, showing lower luminescence intensities. The series resistance of the other three cells are much lower compared to these cells that have inactive regions under low injection conditions. As the injection level increases, it is seen that the series resistance values of five of the six cells become comparable to one another. With regards to the PSF, it was found that using a bandpass filter in front of the lens reduced to amount of spreading observed from a single point source across the detector. Furthermore, there is a strong wavelength dependency in the PSF as the severity increased with increase in the emission wavelength of the solar cells under investigation.In this study an opto-electrical characterisation system was constructed to acquire PL and EL images of various solar cell technologies. In addition to this, a range of factors that influence the quality of these images were investigated and used in the image correction procedure to correct the images for all these cell technologies. It was shown that the correction procedure works for all three of the technologies investigated in this study, and all these factors showed a strong wavelength dependency. These corrected luminescence images together with current-voltage (I-V) data was then used to determine characteristic parameters of a one-diode model of the various PV devices. This was not only achieved, but it also clearly indicated that all the correction procedures need to be considered to obtain a clear and accurate representation of the actual PV device. This has a major influence on the understanding and improvement of these PV devices.
Description: Thesis (MSc) -- Faculty of Science, School of Computer Science, Mathematics, Physics and Statistics, 2024
Format: computer
Format: online resource
Format: application/pdf
Format: 1 online resource (120 pages)
Format: pdf
Publisher: Nelson Mandela University
Publisher: Faculty of Science
Language: English
Rights: Nelson Mandela University
Rights: All Rights Reserved
Rights: Open Access

Hits: 278
Visitors: 292
Downloads: 21

Collections

NMU School of Computer Science, Mathematics, Physics and Statistics

		Thumbnail	File	Description	Size	Format
View Details Download			SOURCE1	Roodt, RP.pdf	8 MB	Adobe Acrobat PDF	View Details Download