- Title
- A raman spectroscopy study of semiconducting thin films
- Creator
- Goosen, William Edward
- Subject
- Raman spectroscopy
- Subject
- Semiconductor films
- Subject
- Thin films
- Date Issued
- 2006
- Date
- 2006
- Type
- Thesis
- Type
- Masters
- Type
- MSc
- Identifier
- vital:10514
- Identifier
- http://hdl.handle.net/10948/426
- Identifier
- Raman spectroscopy
- Identifier
- Semiconductor films
- Identifier
- Thin films
- Description
- A home-built Raman system, utilizing a pseudo-backscattering geometry, was built in the Physics Department at the Nelson Mandela Metropolitan University (NMMU). The system was then used to analyse a variety of bulk and thin film semiconducting materials currently being studied in the Physics Department. Silicon wafers were exposed to hydrogen plasma. Raman analysis of hydrogen induced platelets (HIPs), resulting from hydrogen plasma treatment of silicon, is reported. ZnO layers were deposited on glass, GaAs, Si, sapphire and SiC-Si substrates by metalorganic chemical vapour deposition (MOCVD) in the Physics Department at the NMMU. It was found that the ZnO layers grown by MOCVD all exhibited a strong E2 (high) phonon mode that dominated the Raman spectra. Furthermore, the spectra lacked the A1 (LO) phonon mode which is usually associated with the O-vacancy, the Zn-interstitial, or complexes of the two, indicating that the layers were all of good quality. The influence of depositing the ZnO thin film on a 3 mm thick SiC layer was also investigated and compared with the deposition of ZnO on Si substrate, in order to reduce the lattice mismatch between ZnO and the Si substrate. The possible shift of the Raman peaks due to the residual strain in the film, if present, could not be resolved. Characterization of GaN and AlxGa1-xN produced by MOCVD at the CRHEA laboratory of the CNRS in Valbonne, France is reported. A sharp peak at 567 cm-1 corresponding to the E2 (high) mode of GaN broadens and shifts to higher wavenumbers as the aluminium content of the AlxGa1-xN is increased. The shift is accompanied by a decrease in the intensity and a broadening of this peak. The broadening was attributed to a general decrease in the quality of the layers which accompanies increased aluminium content in AlxGa1-xN.
- Format
- 71 pages
- Format
- Publisher
- Nelson Mandela Metropolitan University
- Publisher
- Faculty of Science
- Language
- English
- Rights
- Nelson Mandela Metropolitan University
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