http://vital.seals.ac.za:8080/vital/access/manager/Index ${session.getAttribute("locale")} 5 http://vital.seals.ac.za:8080/vital/access/manager/Repository/vital:10559 Thu 13 May 2021 07:18:21 SAST ]]> http://vital.seals.ac.za:8080/vital/access/manager/Repository/vital:10518 Thu 13 May 2021 00:39:09 SAST ]]> http://vital.seals.ac.za:8080/vital/access/manager/Repository/vital:10537 580 ˚C) growth temperatures reduce the Mg incorporation. High VI/II ratios also decrease the Mg incorporation, as evidenced by the red-shift of the donor bound exciton (D°X) line. This is ascribed to a stronger premature reaction between (MeCp)2Mg and the oxidant or a preferential heterogeneous interaction between the Mg and oxygen species on the growth front. For both oxidizing agents (O2 and TBOH), the growth at 420 ˚C and a VI-II ratio of 60 on c-Al2O3 gave optimal quality layers in terms of their optical and structural quality. A comparison of films grown using TBOH and O2 gas as oxidizing agent shows no major difference in terms of Mg incorporation. The effect of annealing, the inclusion of a buffer layer and the influence of growth rate on the properties MgxZn1-xO thin films are also reported.]]> Thu 13 May 2021 00:01:15 SAST ]]>