Influence of argon-implantation on conventional and phototransferred thermoluminescence of synthetic quartz

Nsengiyumva, S; Chithambo, Makaiko L; Pichon, L

Title: Influence of argon-implantation on conventional and phototransferred thermoluminescence of synthetic quartz
Creator: Nsengiyumva, S
Creator: Chithambo, Makaiko L
Creator: Pichon, L
Date Issued: 2016
Date: 2016
Type: text
Type: article
Identifier: http://hdl.handle.net/10962/124732
Identifier: vital:35656
Identifier: DOI: 10.1080/10420150.2016.1194412
Description: Conventional and phototransferred thermoluminescence of crystalline synthetic quartz implanted with 70 keV Ar ions at fluences in the range 1 × 1014–5 × 1015 ions/cm2 is reported. The glow curves, recorded at 5°C/s from beta-irradiated samples of similar mass, show a prominent peak between 100°C and 120°C. The thermoluminescence intensity of all implanted samples was greater than that of the unimplanted one. The increase in sensitivity is attributed to a corresponding increase in the concentration of point defects, as a result of the implantation, which act as electron traps or recombination centres. Kinetic analysis carried out using the peak shape, whole glow-peak and curve-fitting methods produced values of the activation energy, frequency factor and order of kinetics that are generally independent of implantation fluence. This result suggests that implantation did not necessarily affect the nature of the electron traps. With respect to phototransferred thermoluminescence, it was observed that it only appeared in the sample implanted at the highest fluence of 5 × 1015 ions/cm2. This may be so because the concentration of deep traps produced as a result of implantation at low fluence is too low to give rise to phototransferred thermoluminescence. The intensity of the phototransferred thermoluminescence goes through a peak with illumination time. We attribute this behaviour to the relative concentration of holes at recombination centres and phototransferred electrons at shallow traps.
Format: 12 pages
Format: pdf
Language: English
Relation: Radiation Effects and Defects in Solids
Relation: Nsengiyumva, S., Chithambo, M.L. and Pichon, L., 2016. Influence of argon-implantation on conventional and phototransferred thermoluminescence of synthetic quartz. Radiation Effects and Defects in Solids, 171(3-4), pp.328-339.
Relation: Radiation Effects and Defects in Solids volume 171 number 3-4 328 339 June 2016 1029-4953
Rights: Taylor and Francis
Rights: Use of this resource is governed by the terms and conditions of the Taylor and Francis Terms and Conditions Statement (https://www.tandfonline.com/terms-and-conditions)

Hits: 1267
Visitors: 1399
Downloads: 149

Collections

RU Department of Physics and Electronics

SDG 09. Industry, Innovation and Infrastructure

Chithambo, Makaiko Liwiro (Prof)

		Thumbnail	File	Description	Size	Format
View Details Download			SOURCE1	Influence of argon-implantation on conventional and phototransferred thermoluminescence of synthetic quartz..jpg	62 KB	JPEG Image	View Details Download