- Title
- Capacitance spectroscopy of GaAs p-i-n solar cells embedded with GaNAs quantum wells
- Creator
- Venter, Danielle Ahlers
- Subject
- Solar cells
- Subject
- Photocatalysis Nanotechnology Fuel cells
- Date Issued
- 2018
- Date
- 2018
- Type
- Thesis
- Type
- Masters
- Type
- MSc
- Identifier
- http://hdl.handle.net/10948/21593
- Identifier
- vital:29713
- Description
- The search for higher efficiencies in solar cell technology has brought forth competitive ideas, among them tandem solar cells (TSC) and intermediate-band solar cells (IBSC). These cells deliver higher efficiencies by absorbing a wider range of the electro-magnetic spectrum compared to conventional cells, but do come with unique challenges. This includes, amongst others, the need to find suitable material systems, which can fully realise the requirements behind the concept. In this study, the notion of using dilute nitrides in III-V systems as a candidate for the IBSC is considered. Incorporation of GaNAs QW structures into GaAs p-i-n solar cells are structurally, optically and electrically characterised. At a first estimate the photovoltaic properties of the material is obtained through current-voltage (I-V) measurements under illumination. It is observed that the open circuit voltage (𝑉𝑂𝐶), short circuit current (𝐼𝑆𝐶) and conversion efficiency decrease upon the incorporation of the QWs. Electrically active defect levels are notorious for reducing the life time of electron-hole pairs, directly impacting cell efficiency. In an effort to gain a clearer understanding of this behavior, the study of electrically active deep level center present in such devices were investigated. A comprehensive understanding of defects in semiconductors remains of fundamental importance and thus reinforces this approach. This was done using two of the most commonly used semiconductor defect spectroscopy techniques viz. admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS). Since in principle, these two techniques are similar, deep level related results were compared in order to verify the validity of the results. The devices under study, GaNAs/GaAs embedded QW p-i-n solar cells, were grown by molecular beam epitaxy (MBE). In particular, the doping of the quantum wells was varied and this effect on the electrical properties investigated. Four samples were studied and their electrical, optical and structural properties compared. The sample series consisted of a reference GaAs p-i-n diode that contained no embedded QWs and three GaAs p-i-n diodes each containing ten equally spaced and equally thick GaNAs QW layers. These layers were either Beryllium (Be) doped (p-type), un-doped or Silicon (Si) doped (n-type) respectively. Both AS and DLTS revealed deep level centers present in the devices. Each technique presented its own list of advantages and disadvantages and the collaborative use of both of them was found to be complementary in their determination of deep level defect centers. The correlation of these defects with the QWs is not clear as the structures were not optimized for capacitance spectroscopic measurements. NextNano++ simulation software was also used to theoretically model the electronic structure of the sample. The addition of the applied bias and its effect on the cross-over point of the Fermi level and the deep level energy, as well as the depletion width was investigated. This was a useful and essential tool for the interpretation of the results obtained and for the design of optimal structures for future studies.
- Format
- xiv, 81 leaves
- Format
- Publisher
- Nelson Mandela University
- Publisher
- Faculty of Science
- Language
- English
- Rights
- Nelson Mandela University
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NMU School of Computer Science, Mathematics, Physics and Statistics
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