- Title
- On the Processing of InAsSb/GaSb photodiodes for infrared detection
- Creator
- Odendaal, Vicky
- Subject
- Gallium arsenide semiconductors
- Subject
- Photovoltaic cells
- Subject
- Infrared detectors
- Subject
- Gas-detectors
- Date Issued
- 2008
- Date
- 2008
- Type
- Thesis
- Type
- Masters
- Type
- MSc
- Identifier
- vital:10523
- Identifier
- http://hdl.handle.net/10948/980
- Identifier
- Gallium arsenide semiconductors
- Identifier
- Photovoltaic cells
- Identifier
- Infrared detectors
- Identifier
- Gas-detectors
- Description
- The objective of this dissertation is the development of the necessary processing steps needed to manufacture infrared photodiodes on InAs1-xSbx material. Preliminary surface preparation steps were performed on both InAs and InSb material, thus covering both possible extremes of the antimony mole fraction. The first experiments endeavoured to characterise the effect of several possible etchants with regards to etch rate, repeatability, limitations for photolithographic patterning and the resultant surface roughness. The etchants investigated include a lactic acid based etchant, a sulphuric acid based etchant, an acetic acid based etchant, an ammonium based etchant, a hydrochloric acid based etchant as well as an organic rinse procedure. These cleaning and etching steps were evaluated at several temperatures. Measurements were performed on an Alpha Step stylus profiler as well as an atomic force microscope. Metal-insulator-semiconductor capacitor devices were manufactured, on both InAs and InSb material, in order to investigate the effects of the above-mentioned etchants combined with surface passivation techniques in terms of surface state densities. Capacitance-versus-bias voltage measurements were done to determine the resultant surface state densities and to compare these to the surface state density of an untreated reference sample. The surface passivation techniques included KOH, Na2S as well as (NH4)2S anodisation. Auger electron spectroscopy measurements were done on InAs and InSb material in order to examine possible surface contamination due to the etchants as well as combinations of these etching and anodisation procedures. The extent of surface coverage by contaminants as well as by the intrinsic elements was measured. The results of the cleaning and etching as well as the surface passivation studies were used to manufacture photovoltaic infrared diodes on an MOCVD (metal oxide chemical vapour deposition) grown p-InAs0.91Sb0.09/i- InAs0.91Sb0.09/n-GaSb structure. Current-versus-voltage and electro-optical measurements were performed on the these diodes in order to evaluate the effect of sulphuric acid based etching combined with KOH, Na2S or (NH4)2S anodisation on the detector performance. The results of surface passivated structures were compared to those of an unpassivated reference detector.
- Format
- v, 130 leaves. : ill. (chiefly col.) ; 31 cm
- Format
- Publisher
- Nelson Mandela Metropolitan University
- Publisher
- Faculty of Science
- Language
- English
- Rights
- Nelson Mandela Metropolitan University
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NMMU School of Computer Science, Mathematics, Physics and Statistics
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