On the Processing of InAsSb/GaSb photodiodes for infrared detection
- Authors: Odendaal, Vicky
- Date: 2008
- Subjects: Gallium arsenide semiconductors , Photovoltaic cells , Infrared detectors , Gas-detectors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10523 , http://hdl.handle.net/10948/980 , Gallium arsenide semiconductors , Photovoltaic cells , Infrared detectors , Gas-detectors
- Description: The objective of this dissertation is the development of the necessary processing steps needed to manufacture infrared photodiodes on InAs1-xSbx material. Preliminary surface preparation steps were performed on both InAs and InSb material, thus covering both possible extremes of the antimony mole fraction. The first experiments endeavoured to characterise the effect of several possible etchants with regards to etch rate, repeatability, limitations for photolithographic patterning and the resultant surface roughness. The etchants investigated include a lactic acid based etchant, a sulphuric acid based etchant, an acetic acid based etchant, an ammonium based etchant, a hydrochloric acid based etchant as well as an organic rinse procedure. These cleaning and etching steps were evaluated at several temperatures. Measurements were performed on an Alpha Step stylus profiler as well as an atomic force microscope. Metal-insulator-semiconductor capacitor devices were manufactured, on both InAs and InSb material, in order to investigate the effects of the above-mentioned etchants combined with surface passivation techniques in terms of surface state densities. Capacitance-versus-bias voltage measurements were done to determine the resultant surface state densities and to compare these to the surface state density of an untreated reference sample. The surface passivation techniques included KOH, Na2S as well as (NH4)2S anodisation. Auger electron spectroscopy measurements were done on InAs and InSb material in order to examine possible surface contamination due to the etchants as well as combinations of these etching and anodisation procedures. The extent of surface coverage by contaminants as well as by the intrinsic elements was measured. The results of the cleaning and etching as well as the surface passivation studies were used to manufacture photovoltaic infrared diodes on an MOCVD (metal oxide chemical vapour deposition) grown p-InAs0.91Sb0.09/i- InAs0.91Sb0.09/n-GaSb structure. Current-versus-voltage and electro-optical measurements were performed on the these diodes in order to evaluate the effect of sulphuric acid based etching combined with KOH, Na2S or (NH4)2S anodisation on the detector performance. The results of surface passivated structures were compared to those of an unpassivated reference detector.
- Full Text:
- Date Issued: 2008
- Authors: Odendaal, Vicky
- Date: 2008
- Subjects: Gallium arsenide semiconductors , Photovoltaic cells , Infrared detectors , Gas-detectors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10523 , http://hdl.handle.net/10948/980 , Gallium arsenide semiconductors , Photovoltaic cells , Infrared detectors , Gas-detectors
- Description: The objective of this dissertation is the development of the necessary processing steps needed to manufacture infrared photodiodes on InAs1-xSbx material. Preliminary surface preparation steps were performed on both InAs and InSb material, thus covering both possible extremes of the antimony mole fraction. The first experiments endeavoured to characterise the effect of several possible etchants with regards to etch rate, repeatability, limitations for photolithographic patterning and the resultant surface roughness. The etchants investigated include a lactic acid based etchant, a sulphuric acid based etchant, an acetic acid based etchant, an ammonium based etchant, a hydrochloric acid based etchant as well as an organic rinse procedure. These cleaning and etching steps were evaluated at several temperatures. Measurements were performed on an Alpha Step stylus profiler as well as an atomic force microscope. Metal-insulator-semiconductor capacitor devices were manufactured, on both InAs and InSb material, in order to investigate the effects of the above-mentioned etchants combined with surface passivation techniques in terms of surface state densities. Capacitance-versus-bias voltage measurements were done to determine the resultant surface state densities and to compare these to the surface state density of an untreated reference sample. The surface passivation techniques included KOH, Na2S as well as (NH4)2S anodisation. Auger electron spectroscopy measurements were done on InAs and InSb material in order to examine possible surface contamination due to the etchants as well as combinations of these etching and anodisation procedures. The extent of surface coverage by contaminants as well as by the intrinsic elements was measured. The results of the cleaning and etching as well as the surface passivation studies were used to manufacture photovoltaic infrared diodes on an MOCVD (metal oxide chemical vapour deposition) grown p-InAs0.91Sb0.09/i- InAs0.91Sb0.09/n-GaSb structure. Current-versus-voltage and electro-optical measurements were performed on the these diodes in order to evaluate the effect of sulphuric acid based etching combined with KOH, Na2S or (NH4)2S anodisation on the detector performance. The results of surface passivated structures were compared to those of an unpassivated reference detector.
- Full Text:
- Date Issued: 2008
Towards the development of InAs/GaInSb strained-layer superlattices for infrared detection
- Authors: Botha, Lindsay
- Date: 2008
- Subjects: Gallium arsenide semiconductors , Indium alloys , Compound semiconductors , Organometallic compounds , Infrared detectors , Infrared technology , Superlattices as materials
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10526 , http://hdl.handle.net/10948/713 , Gallium arsenide semiconductors , Indium alloys , Compound semiconductors , Organometallic compounds , Infrared detectors , Infrared technology , Superlattices as materials
- Description: This study focuses on the development of InAs/GaInSb strained-layer superlattice structures by metal organic chemical vapour deposition (MOCVD), and deals with two aspects of the development of InAs/GaInSb SLS’s by MOCVD viz. the deposition of nano-scale (~100 Å) GaInSb layers, and the electrical characterization of unstrained InAs. The first part of this work aims to study the MOCVD growth of GaInSb layers in terms of deposition rate and indium incorporation on the nano-scale. This task is approached by first optimizing the growth of relatively thick (~2 μm) epitaxial films, and then assuming similar growth parameters during nano-scale deposition. The GaInSb layers were grown as part of GaInSb/GaSb quantum well (QW) structures. By using this approach, the GaInSb QW’s (~100 Å) could be characterized with the use of photoluminescence spectroscopy, which, when used in conjunction with transmission electron microscopy and/or X-ray diffractomery, proves useful in the analysis of such small scale deposition. It is shown that the growth rate of GaInSb on the nano-scale approaches the nominal growth rates determined from thick (~2 μm) GaInSb calibration layers. The In incorporation efficiency in nano-layers, however, was markedly lower than what was predicted by the GaInSb calibration layers. This reduction in indium incorporation could be the result of the effects of strain on In incorporation. The choice of substrate orientation for QW deposition was also studied. QW structures were grown simultaneously on both (100) and 2°off (100) GaSb(Te) substrates, and it is shown that growth on non-vicinal substrates is more conducive to the deposition of high quality QW structures. The second part of this study focuses on the electrical characterization of unstrained InAs. It is long known that conventional Hall measurements cannot be used to accurately characterize InAs epitaxial layers, as a result of parallel conduction resulting from surface and/or interface effects. This study looks at extracting the surface and bulk electrical properties of n-type InAs thin films directly from variable magnetic field Hall measurements. For p-type InAs, the situation is complicated by the relatively large electron to hole mobility ratio of InAs which tends to conceal the p-type nature of InAs thin films from Hall measurements. Here, this effect is illustrated by way of theoretical simulation of Hall data.
- Full Text:
- Date Issued: 2008
- Authors: Botha, Lindsay
- Date: 2008
- Subjects: Gallium arsenide semiconductors , Indium alloys , Compound semiconductors , Organometallic compounds , Infrared detectors , Infrared technology , Superlattices as materials
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10526 , http://hdl.handle.net/10948/713 , Gallium arsenide semiconductors , Indium alloys , Compound semiconductors , Organometallic compounds , Infrared detectors , Infrared technology , Superlattices as materials
- Description: This study focuses on the development of InAs/GaInSb strained-layer superlattice structures by metal organic chemical vapour deposition (MOCVD), and deals with two aspects of the development of InAs/GaInSb SLS’s by MOCVD viz. the deposition of nano-scale (~100 Å) GaInSb layers, and the electrical characterization of unstrained InAs. The first part of this work aims to study the MOCVD growth of GaInSb layers in terms of deposition rate and indium incorporation on the nano-scale. This task is approached by first optimizing the growth of relatively thick (~2 μm) epitaxial films, and then assuming similar growth parameters during nano-scale deposition. The GaInSb layers were grown as part of GaInSb/GaSb quantum well (QW) structures. By using this approach, the GaInSb QW’s (~100 Å) could be characterized with the use of photoluminescence spectroscopy, which, when used in conjunction with transmission electron microscopy and/or X-ray diffractomery, proves useful in the analysis of such small scale deposition. It is shown that the growth rate of GaInSb on the nano-scale approaches the nominal growth rates determined from thick (~2 μm) GaInSb calibration layers. The In incorporation efficiency in nano-layers, however, was markedly lower than what was predicted by the GaInSb calibration layers. This reduction in indium incorporation could be the result of the effects of strain on In incorporation. The choice of substrate orientation for QW deposition was also studied. QW structures were grown simultaneously on both (100) and 2°off (100) GaSb(Te) substrates, and it is shown that growth on non-vicinal substrates is more conducive to the deposition of high quality QW structures. The second part of this study focuses on the electrical characterization of unstrained InAs. It is long known that conventional Hall measurements cannot be used to accurately characterize InAs epitaxial layers, as a result of parallel conduction resulting from surface and/or interface effects. This study looks at extracting the surface and bulk electrical properties of n-type InAs thin films directly from variable magnetic field Hall measurements. For p-type InAs, the situation is complicated by the relatively large electron to hole mobility ratio of InAs which tends to conceal the p-type nature of InAs thin films from Hall measurements. Here, this effect is illustrated by way of theoretical simulation of Hall data.
- Full Text:
- Date Issued: 2008
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