Spatially resolved opto-electric measurements of photovoltaic materials and devices
- Authors: Thantsha, Nicolas Matome
- Date: 2010
- Subjects: Photovoltaic cells , Photovoltaic power systems , Photovoltaic power generation
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10520 , http://hdl.handle.net/10948/1123 , Photovoltaic cells , Photovoltaic power systems , Photovoltaic power generation
- Description: The objective of this study is to characterize and analyse defects in solar cell devices. Materials used to fabricate solar cells are not defects free and therefore, there is a need to investigate defects in cells. To investigate this, a topographical technique was developed and employed which uses a non-destructive methodology to analyse solar cells. A system was built which uses a technique based on a laser beam induced current (LBIC). LBIC technique involves focusing light on to a surface of a solar cell device in order to create a photo-generated current that can be measured in the external circuit for analyses. The advantage of this technique is that it allows parameter extraction. Parameters that can be extracted include short-circuit current, carrier lifetime and also the external and internal quantum efficiency of a solar cell. In this thesis, LBIC measurements in the form of picture maps are used to indicate the distribution of the localized beam induced current within solar cells. Areas with low minority carrier lifetime in solar cells are made visible by LBIC mapping. Surface reflection intensity measurements of cells can also be mapped using the LBIC system developed in this study. The system is also capable of mapping photo-generated current of a cell below and above room temperature. This thesis also presents an assessment procedure capable of assessing the device and performance parameters with reference to I-V measurements. The dark and illuminated I-V characteristics of solar cells were investigated. The illuminated I-V characteristics of solar cells were obtained using a defocused laser beam. Dark I-V measurements were performed by applying voltage across the cell in the dark and measuring a current through it. The device parameters which describe the behaviour of I-V characteristic were extracted from the I-V data using Particle Swarm Optimization (PSO) method based on a one-and two-diode solar cell models. Solar cells of different technologies were analysed, namely, single-crystalline (c-Si) and multicrystalline (mc-Si) silicon, Edge-defined Film-fed Growth Si (EFG-Si) and Cu(In,Ga)(Se,S)2 (CIGSS) thin film based cells. The LBIC results illustrated the effect of surface reflection features and material defects in the solar cell investigated. IQE at a wavelength of 660 nm were measured on these cells and the results in general emphasised the importance of correcting optical losses, i.e. reflection loss, when characterizing different types of defects. The agreement between the IQE measurements and I-V characteristics of a cell showed that the differences in crystal grains influence the performance of a mc-Si cell. The temperature-dependence of I-V characteristics of a CIGSS solar cell was investigated. The results showed that, for this material, the photo response is reduced at elevated temperatures. In addition to LBIC using a laser beam, solar spectral radiation was employed to obtained device performance parameters. The results emphasised the effect of grain boundaries as a recombination centres for photo-generated hole-pairs. Lastly, mesa diode characterizations of solar cells were investigated. Mesa diodes are achieved by etching down a solar cell so that the plateau regions are formed. Mesa diodes expose the p-n junction, and therefore mesa diode analysis provides a better way of determining and revealing the fundamental current conduction mechanism at the junction. Mesa diodes avoid possible edge effects. This study showed that mesa diodes can be used to characterize spatial non-uniformities in solar cells. The results obtained in this study indicate that LBIC is a useful tool for defect characterization in solar cells. Also LBIC complements other characterization techniques such as I-V characterization.
- Full Text:
- Date Issued: 2010
- Authors: Thantsha, Nicolas Matome
- Date: 2010
- Subjects: Photovoltaic cells , Photovoltaic power systems , Photovoltaic power generation
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10520 , http://hdl.handle.net/10948/1123 , Photovoltaic cells , Photovoltaic power systems , Photovoltaic power generation
- Description: The objective of this study is to characterize and analyse defects in solar cell devices. Materials used to fabricate solar cells are not defects free and therefore, there is a need to investigate defects in cells. To investigate this, a topographical technique was developed and employed which uses a non-destructive methodology to analyse solar cells. A system was built which uses a technique based on a laser beam induced current (LBIC). LBIC technique involves focusing light on to a surface of a solar cell device in order to create a photo-generated current that can be measured in the external circuit for analyses. The advantage of this technique is that it allows parameter extraction. Parameters that can be extracted include short-circuit current, carrier lifetime and also the external and internal quantum efficiency of a solar cell. In this thesis, LBIC measurements in the form of picture maps are used to indicate the distribution of the localized beam induced current within solar cells. Areas with low minority carrier lifetime in solar cells are made visible by LBIC mapping. Surface reflection intensity measurements of cells can also be mapped using the LBIC system developed in this study. The system is also capable of mapping photo-generated current of a cell below and above room temperature. This thesis also presents an assessment procedure capable of assessing the device and performance parameters with reference to I-V measurements. The dark and illuminated I-V characteristics of solar cells were investigated. The illuminated I-V characteristics of solar cells were obtained using a defocused laser beam. Dark I-V measurements were performed by applying voltage across the cell in the dark and measuring a current through it. The device parameters which describe the behaviour of I-V characteristic were extracted from the I-V data using Particle Swarm Optimization (PSO) method based on a one-and two-diode solar cell models. Solar cells of different technologies were analysed, namely, single-crystalline (c-Si) and multicrystalline (mc-Si) silicon, Edge-defined Film-fed Growth Si (EFG-Si) and Cu(In,Ga)(Se,S)2 (CIGSS) thin film based cells. The LBIC results illustrated the effect of surface reflection features and material defects in the solar cell investigated. IQE at a wavelength of 660 nm were measured on these cells and the results in general emphasised the importance of correcting optical losses, i.e. reflection loss, when characterizing different types of defects. The agreement between the IQE measurements and I-V characteristics of a cell showed that the differences in crystal grains influence the performance of a mc-Si cell. The temperature-dependence of I-V characteristics of a CIGSS solar cell was investigated. The results showed that, for this material, the photo response is reduced at elevated temperatures. In addition to LBIC using a laser beam, solar spectral radiation was employed to obtained device performance parameters. The results emphasised the effect of grain boundaries as a recombination centres for photo-generated hole-pairs. Lastly, mesa diode characterizations of solar cells were investigated. Mesa diodes are achieved by etching down a solar cell so that the plateau regions are formed. Mesa diodes expose the p-n junction, and therefore mesa diode analysis provides a better way of determining and revealing the fundamental current conduction mechanism at the junction. Mesa diodes avoid possible edge effects. This study showed that mesa diodes can be used to characterize spatial non-uniformities in solar cells. The results obtained in this study indicate that LBIC is a useful tool for defect characterization in solar cells. Also LBIC complements other characterization techniques such as I-V characterization.
- Full Text:
- Date Issued: 2010
Investigation of device and performance parameters of photovoltaic devices
- Macabebe, Erees Queen Barrido
- Authors: Macabebe, Erees Queen Barrido
- Date: 2009
- Subjects: Photovoltaic cells , Solar cells , Photovoltaic power systems , Photovoltaic power generation
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10538 , http://hdl.handle.net/10948/1003 , http://hdl.handle.net/10948/d1012890 , Photovoltaic cells , Solar cells , Photovoltaic power systems , Photovoltaic power generation
- Description: In order to investigate the influence of parasitic resistances, saturation current and diode ideality factor on the performance of photovoltaic devices, parameter extraction routines employing the standard iteration (SI) method and the particle swarm optimization (PSO) method were developed to extract the series resistance, shunt resistance, saturation current and ideality factor from the I-V characteristics of solar cells and PV modules. The well-known one- and two-diode models were used to describe the behavior of the I-V curve and the parameters of the models were determined by approximation and iteration techniques. The SI and the PSO extraction programmes were used to assess the suitability of the one- and the two-diode solar cell models in describing the I-V characteristics of mono- and multicrystalline silicon solar cells, CISS- and CIGSS-based solar cells. This exercise revealed that the two-diode model provides more information regarding the different processes involved in solar cell operation. Between the two methods developed, the PSO method is faster, yielded fitted curves with lower standard deviation of residuals and, therefore, was the preferred extraction method. The PSO method was then used to extract the device parameters of CISS-based solar cells with the CISS layer selenized under different selenization process conditions and CIGSS-based solar cells with varying i-ZnO layer thickness. For the CISS-based solar cells, the detrimental effect of parasitic resistances on device performance increased when the temperature and duration of the selenization process was increased. For the CIGSS-based devices, photogeneration improved with increasing i-ZnO layer thickness. At high forward bias, bulk recombination and/or tunneling-assisted recombination were the dominant processes affecting the I-V characteristics of the devices. v Lastly, device and performance parameters of mono-, multicrystalline silicon and CIS modules derived from I-V characteristics obtained under dark and illuminated conditions were analyzed considering the effects of temperature on the performance of the devices. Results showed that the effects of parasitic resistances are greater under illumination and, under outdoor conditions, the values further declined due to increasing temperature. The saturation current and ideality factor also increased under outdoor conditions which suggest increased recombination and, coupled with the adverse effects of parasitic resistances, these factors result in lower FF and lower maximum power point. Analysis performed on crystalline silicon and thin film devices utilized in this study revealed that parameter extraction from I-V characteristics of photovoltaic devices and, in particular, the implementation of PSO in solar cell device parameter extraction developed in this work is a useful characterization technique.
- Full Text:
- Date Issued: 2009
- Authors: Macabebe, Erees Queen Barrido
- Date: 2009
- Subjects: Photovoltaic cells , Solar cells , Photovoltaic power systems , Photovoltaic power generation
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10538 , http://hdl.handle.net/10948/1003 , http://hdl.handle.net/10948/d1012890 , Photovoltaic cells , Solar cells , Photovoltaic power systems , Photovoltaic power generation
- Description: In order to investigate the influence of parasitic resistances, saturation current and diode ideality factor on the performance of photovoltaic devices, parameter extraction routines employing the standard iteration (SI) method and the particle swarm optimization (PSO) method were developed to extract the series resistance, shunt resistance, saturation current and ideality factor from the I-V characteristics of solar cells and PV modules. The well-known one- and two-diode models were used to describe the behavior of the I-V curve and the parameters of the models were determined by approximation and iteration techniques. The SI and the PSO extraction programmes were used to assess the suitability of the one- and the two-diode solar cell models in describing the I-V characteristics of mono- and multicrystalline silicon solar cells, CISS- and CIGSS-based solar cells. This exercise revealed that the two-diode model provides more information regarding the different processes involved in solar cell operation. Between the two methods developed, the PSO method is faster, yielded fitted curves with lower standard deviation of residuals and, therefore, was the preferred extraction method. The PSO method was then used to extract the device parameters of CISS-based solar cells with the CISS layer selenized under different selenization process conditions and CIGSS-based solar cells with varying i-ZnO layer thickness. For the CISS-based solar cells, the detrimental effect of parasitic resistances on device performance increased when the temperature and duration of the selenization process was increased. For the CIGSS-based devices, photogeneration improved with increasing i-ZnO layer thickness. At high forward bias, bulk recombination and/or tunneling-assisted recombination were the dominant processes affecting the I-V characteristics of the devices. v Lastly, device and performance parameters of mono-, multicrystalline silicon and CIS modules derived from I-V characteristics obtained under dark and illuminated conditions were analyzed considering the effects of temperature on the performance of the devices. Results showed that the effects of parasitic resistances are greater under illumination and, under outdoor conditions, the values further declined due to increasing temperature. The saturation current and ideality factor also increased under outdoor conditions which suggest increased recombination and, coupled with the adverse effects of parasitic resistances, these factors result in lower FF and lower maximum power point. Analysis performed on crystalline silicon and thin film devices utilized in this study revealed that parameter extraction from I-V characteristics of photovoltaic devices and, in particular, the implementation of PSO in solar cell device parameter extraction developed in this work is a useful characterization technique.
- Full Text:
- Date Issued: 2009
On the evaluation of spectral effects on photovoltaic modules performance parameters and hotspots in solar cells
- Authors: Simon, Michael
- Date: 2009
- Subjects: Photovoltaic cells , Energy dissipation , Electric power production , Photovoltaic power generation , Solar energy , Spectral energy distribution
- Language: English
- Type: Thesis , Doctoral , PhD (Physics)
- Identifier: vital:11593 , http://hdl.handle.net/10353/257 , Photovoltaic cells , Energy dissipation , Electric power production , Photovoltaic power generation , Solar energy , Spectral energy distribution
- Description: The performance of photovoltaic (PV) modules in terms of their ability to convert incident photon to electrical energy (efficiency) depends mostly on the spectral distribution of incident radiation from the sun. The incident spectrum finally perceived by the module depends strongly on the composition of the medium in which it has traveled. The composition of the earth’s atmosphere, which includes, amongst others, water vapour, gases such as carbon dioxide and oxygen, absorbs or scatters some of the sunlight. The incident solar spectrum is also modified by the diffuse aspect of radiation from the sky which strongly depends on aerosol concentration, cloudiness and local reflection of the earth’s surface. Although it is well known that the changes in outdoor spectrum affect device performance, little work has been conducted to support this theory. This is probably due to lack of spectral data or in certain instances where data is available, little knowledge of interpreting that data. The outdoor spectral data that one obtains in the field does not come clearly for just simple interpretation. Different analytical interpretation procedures have been proposed, all trying to explain and quantify the spectral influence on PV devices. In this study an assessment methodology for evaluating the effects of outdoor spectra on device performance parameters during the course of the day, seasons and or cloudy cover has been developed. The methodology consists of developing a device dependant concept, Weighted Useful Fraction (WUF) using the outdoor measured spectral data. For measuring PV module’s performance parameters, a current-voltage (I-V) tester was developed in order to monitor the performance of six different module technologies. The Gaussian distribution was used to interpret the data. For hot-spot analysis, different techniques were used, which include Infrared thermographic technique for identifying the hot-spots in the solar cells, SEM and EDX techniques. The AES technique was also used in order to identify other elements at hot-spots sites that could not be detected by the EDX technique. iii Results obtained indicate that multicrystalline modules performance is affected by the changes in the outdoor spectrum during summer or winter seasons. The modules prefer a spectrum characterized by WUF = 0.809 during summer season. This spectrum corresponds to AM 2.19 which is different from AM 1.5 used for device ratings. In winter, the mc-Si module’s WUF (0.7125) peaks at 13h00 at a value corresponding to AM 1.83. Although these devices have a wider wavelength range, they respond differently in real outdoor environment. Results for mono – Si module showed that the device performs best at WUF = 0.6457 which corresponds to AM 1.83 during summer season, while it operates optimally under a winter spectrum indicated by WUF of 0.5691 (AM2.58). The seasonal changes resulted in the shift in WUF during day time corresponding to the “preferred” spectrum. This shift indicates that these devices should be rated using AM values that correspond to the WUF values under which the device operates optimally. For poly-Si, it was also observed the WUF values are lower than the other two crystalline-Si counterparts. The pc-Si was observed to prefer a lower AM value indicated by WUF = 0.5813 during winter season while for summer it prefers a spectrum characterized by WUF = 0.5541 at AM 3.36. The performance of the single junction a-Si module degraded by 67 percent after an initial outdoor exposure of 16 kWh/m² while the HIT module did not exhibit the initial degradation regardless of their similarities in material composition. It was established that the WUF before degradation peaks at 15h00 at a value of 0.7130 corresponding to AM 4.50 while the WUF after degradation “prefers” the spectrum (WUF = 0.6578) experienced at 15h30 corresponding to AM value of 5.57. Comparing the before and after degradation scenarios of a-Si:H, it was observed that the device spends less time under the red spectrum which implies that the device “prefers” a full spectrum to operate optimally. The degradation of a-Si:H device revealed that the device spectral response was also shifted by a 7.7 percent after degradation. A higher percentage difference (61.8 percent) for spectral range for the HIT module is observed, but with no effects on device parameters. Seasonal changes (summer/winter) resulted in the outdoor spectrum of CuInSe2 to vary by WUF = 1.5 percent, which resulted in the decrease in Isc. This was ascertained by iv analyzing the percentage change in WUF and evaluating the corresponding change in Isc. The analysis showed that there was a large percentage difference of the module’s Isc as the outdoor spectrum changed during the course of the day. This confirmed that the 17 percent decrease in Isc was due to a WUF of 1.5 percent. In mc-Si solar cells used in this study, it was found that elemental composition across the entire solar cell was not homogenously distributed resulting in high concentration of transition metals which were detected at hot spot areas. The presence of transition metals causes hot-spot formation in crystalline solar cells. Although several transition elements exist at hot-spot regions, the presence of oxygen, carbon, iron and platinum was detected in high concentrations. From this study, it is highly recommended that transition elements and oxygen must be minimized so as to increase the life expectancy of these devices and improve overall systems reliability
- Full Text:
- Date Issued: 2009
- Authors: Simon, Michael
- Date: 2009
- Subjects: Photovoltaic cells , Energy dissipation , Electric power production , Photovoltaic power generation , Solar energy , Spectral energy distribution
- Language: English
- Type: Thesis , Doctoral , PhD (Physics)
- Identifier: vital:11593 , http://hdl.handle.net/10353/257 , Photovoltaic cells , Energy dissipation , Electric power production , Photovoltaic power generation , Solar energy , Spectral energy distribution
- Description: The performance of photovoltaic (PV) modules in terms of their ability to convert incident photon to electrical energy (efficiency) depends mostly on the spectral distribution of incident radiation from the sun. The incident spectrum finally perceived by the module depends strongly on the composition of the medium in which it has traveled. The composition of the earth’s atmosphere, which includes, amongst others, water vapour, gases such as carbon dioxide and oxygen, absorbs or scatters some of the sunlight. The incident solar spectrum is also modified by the diffuse aspect of radiation from the sky which strongly depends on aerosol concentration, cloudiness and local reflection of the earth’s surface. Although it is well known that the changes in outdoor spectrum affect device performance, little work has been conducted to support this theory. This is probably due to lack of spectral data or in certain instances where data is available, little knowledge of interpreting that data. The outdoor spectral data that one obtains in the field does not come clearly for just simple interpretation. Different analytical interpretation procedures have been proposed, all trying to explain and quantify the spectral influence on PV devices. In this study an assessment methodology for evaluating the effects of outdoor spectra on device performance parameters during the course of the day, seasons and or cloudy cover has been developed. The methodology consists of developing a device dependant concept, Weighted Useful Fraction (WUF) using the outdoor measured spectral data. For measuring PV module’s performance parameters, a current-voltage (I-V) tester was developed in order to monitor the performance of six different module technologies. The Gaussian distribution was used to interpret the data. For hot-spot analysis, different techniques were used, which include Infrared thermographic technique for identifying the hot-spots in the solar cells, SEM and EDX techniques. The AES technique was also used in order to identify other elements at hot-spots sites that could not be detected by the EDX technique. iii Results obtained indicate that multicrystalline modules performance is affected by the changes in the outdoor spectrum during summer or winter seasons. The modules prefer a spectrum characterized by WUF = 0.809 during summer season. This spectrum corresponds to AM 2.19 which is different from AM 1.5 used for device ratings. In winter, the mc-Si module’s WUF (0.7125) peaks at 13h00 at a value corresponding to AM 1.83. Although these devices have a wider wavelength range, they respond differently in real outdoor environment. Results for mono – Si module showed that the device performs best at WUF = 0.6457 which corresponds to AM 1.83 during summer season, while it operates optimally under a winter spectrum indicated by WUF of 0.5691 (AM2.58). The seasonal changes resulted in the shift in WUF during day time corresponding to the “preferred” spectrum. This shift indicates that these devices should be rated using AM values that correspond to the WUF values under which the device operates optimally. For poly-Si, it was also observed the WUF values are lower than the other two crystalline-Si counterparts. The pc-Si was observed to prefer a lower AM value indicated by WUF = 0.5813 during winter season while for summer it prefers a spectrum characterized by WUF = 0.5541 at AM 3.36. The performance of the single junction a-Si module degraded by 67 percent after an initial outdoor exposure of 16 kWh/m² while the HIT module did not exhibit the initial degradation regardless of their similarities in material composition. It was established that the WUF before degradation peaks at 15h00 at a value of 0.7130 corresponding to AM 4.50 while the WUF after degradation “prefers” the spectrum (WUF = 0.6578) experienced at 15h30 corresponding to AM value of 5.57. Comparing the before and after degradation scenarios of a-Si:H, it was observed that the device spends less time under the red spectrum which implies that the device “prefers” a full spectrum to operate optimally. The degradation of a-Si:H device revealed that the device spectral response was also shifted by a 7.7 percent after degradation. A higher percentage difference (61.8 percent) for spectral range for the HIT module is observed, but with no effects on device parameters. Seasonal changes (summer/winter) resulted in the outdoor spectrum of CuInSe2 to vary by WUF = 1.5 percent, which resulted in the decrease in Isc. This was ascertained by iv analyzing the percentage change in WUF and evaluating the corresponding change in Isc. The analysis showed that there was a large percentage difference of the module’s Isc as the outdoor spectrum changed during the course of the day. This confirmed that the 17 percent decrease in Isc was due to a WUF of 1.5 percent. In mc-Si solar cells used in this study, it was found that elemental composition across the entire solar cell was not homogenously distributed resulting in high concentration of transition metals which were detected at hot spot areas. The presence of transition metals causes hot-spot formation in crystalline solar cells. Although several transition elements exist at hot-spot regions, the presence of oxygen, carbon, iron and platinum was detected in high concentrations. From this study, it is highly recommended that transition elements and oxygen must be minimized so as to increase the life expectancy of these devices and improve overall systems reliability
- Full Text:
- Date Issued: 2009
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