- Title
- Development of InSb/GaSb quantum dots by MOVPE
- Creator
- Ahia, Chinedu Christian
- Subject
- Semiconductors
- Subject
- Quantum electronics Organometallic compounds
- Date Issued
- 2018
- Date
- 2018
- Type
- Thesis
- Type
- Doctoral
- Type
- DPhil
- Identifier
- http://hdl.handle.net/10948/23382
- Identifier
- vital:30537
- Description
- There has been an increasing interest in the modification of semiconductor band structures through the reduction of their dimensions, which simultaneously increases the band gap energy of the material and gives rise to flexibility in device properties. Advances in III-V antimony (Sb) based semiconductor fabrication have triggered the quest for extension of the emission/absorption wavelength range of this family of compounds for optoelectronic devices operating in the mid-infrared region of the electromagnetic spectrum. An interesting material system for mid-infrared (MIR) applications is indium antimonide (InSb) quantum dots (QDs) within a gallium antimonide (GaSb) matrix. However, its band alignment and emission wavelength has been the subject of some interest and controversy over the years. This study focuses on the development of InSb/GaSb QDs by metal organic vapour phase epitaxy (MOVPE). The samples were grown on different substrates using various growth parameters in order to vary the size, density and aspect ratio of the dots. Interfacial growth interruptions while flowing various source precursors through the reactor were investigated in order to influence the chemical termination of the surface, and hence the resulting strain in the structures. The samples were characterized using photoluminescence spectroscopy, scanning probe microscopy, scanning electron microscopy, X-ray diffraction and transmission electron microscopy. Likewise, the band alignment, energy levels, and carrier wave functions of the samples in this work were modelled theoretically using the nextnanomat software (version 3.1.0.0). A comparison of growth on two different GaSb substrates [(100) 2° off towards <111>B ± 0.1ᵒ and (111) ± 0.1ᵒ] using similar growth conditions yielded a higher dot density on the (100) substrate compared to the (111) substrate. This was attributed to the presence of terraces/atomic steps induced by the misorientation on the (100) substrate, which invariably gives rise to increased adsorption and an enhanced sticking coefficient of adatoms. Studies on the influence of a buffer layer on the morphology of uncapped dots showed that the shape and size of the dots are sensitive to the thickness of the buffer layer. In some case a corrugated buffer surface resulted, which introduced order in the arrangement of the dots, which formed preferentially inside the troughs. An increase in the V/III ratio from 1.0 to 3.0 was found to reduce the areal density of the QDs, while an analysis of the diameter histograms showed a narrowing of the size distribution with an increase in V/III ratio. The larger size distribution at low V/III was ascribed to the increase in indium species and the increased indium adatom migration length. This leads to increased dot density and nucleation sites, and thus triggers an increase in the conversion of tiny QDs into thermodynamically more suitable larger dots via coalescence. However, as the V/III ratio increased, the number of indium adatoms available for growth on the surface reduced, which automatically led to a decrease in the migration length of indium species which is unfavourable for the production of nucleation sites and to a decrease in dot density. Low growth rates were found to be beneficial for the growth of a high density (~5×1010cm-2) of QDs. Photoluminescence (PL) analysis of the capped samples at low temperature (~10 K), using an excitation power of 2 mW, showed a PL peak at ∼732 meV. Upon an increase in laser power to 120 mW, a blue shift of ∼ 8 meV was noticed. This emission typically persisted up to 60–70 K. An increase in the number of InSb QD-layers, was observed to cause an increase in the luminescence spectral line width and a long-wavelength shift of the PL lines, together with an enhancement in the strength of the PL emission. However, high resolution transmission electron microscopy (HRTEM) of the capped dots revealed the formation of an InGaSb quantum well-like structure, ∼10 nm thick, which was responsible for the PL signal mentioned above. The absence of QDs in the capped sample was attributed to inter-diffusion of Ga and In during the deposition of the cap layer, giving rise to a quantum well (QW) instead of the intended QDs. The presence of threading dislocations and stacking faults were also observed in the TEM micrographs of the samples containing multilayers, which can account for the fast quenching of the PL emission with increasing temperature from these samples. Theoretical simulations of the band alignment, wave functions and energy levels were in good agreement with the data collected from the PL spectra of the samples.
- Format
- iv, 147 leaves
- Format
- Publisher
- Nelson Mandela University
- Publisher
- Faculty of Science
- Language
- English
- Rights
- Nelson Mandela University
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