- Title
- Analysis of the extended defects in 3C-SiC
- Creator
- Olivier, Ezra Jacobus
- Subject
- Crystals -- Defects
- Subject
- Crystallography
- Subject
- Silicon carbide
- Date Issued
- 2008
- Date
- 2008
- Type
- Thesis
- Type
- Masters
- Type
- MSc
- Identifier
- vital:10525
- Identifier
- http://hdl.handle.net/10948/730
- Identifier
- Crystals -- Defects
- Identifier
- Crystallography
- Identifier
- Silicon carbide
- Description
- The dissertation focuses on the analysis of the extended defects present in as-grown and proton bombarded β-SiC (annealed and unannealed) grown by chemical vapour deposition (CVD) on (001) Si. The proton irradiation was done to a dose of 2.8 × 1016 protons/cm2 and the annealing took place at 1300°C and 1600°C for 1hr. The main techniques used for the analysis were transmission electron microscopy (TEM) and high resolution TEM (HRTEM). From the diffraction study of the material the phase of the SiC was confirmed to be the cubic beta phase with the zinc-blende structure. The main defects found in the β- SiC were stacking faults (SFs) with their associated partial dislocations and microtwins. The SFs were uniformly distributed throughout the foil. The SFs were identified as having a fault vector of the type 1/3 <111> with bonding partial dislocations of the type 1/6 <121> by using image simulation. The SFs were also found to be predominantly extrinsic in nature by using HRTEM analysis of SFs viewed edge-on. Also both bright and dar-field images of SFs on inclined planes exhibited symmetrical and complementary fringe contrast images. This is a result of the anomalous absorption ratio of SiC lying between that of Si and diamond. The analysis of the annealed and unannealed irradiated β-SiC yielded no evidence of radiation damage or change in the crystal structure of the β-SiC. This confirmed that β-SiC is a radiation resistant material. The critical proton dose for the creation of small dislocation loops seems to be higher than for other compound semiconductors with the zinc-blende structure.
- Format
- iii, 56 leaves ; 30 cm
- Format
- Publisher
- Nelson Mandela Metropolitan University
- Publisher
- Faculty of Science
- Language
- English
- Rights
- Nelson Mandela Metropolitan University
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