- Title
- AP-MOVPE growth and characterisation of GaSb/GaAs quantum dots
- Creator
- Tile, Ngcali
- Subject
- Quantum theory
- Subject
- Quantum electronics Quantum dots Semiconductors
- Date Issued
- 2018
- Date
- 2018
- Type
- Thesis
- Type
- Doctoral
- Type
- DPhil
- Identifier
- http://hdl.handle.net/10948/36716
- Identifier
- vital:34047
- Description
- GaSb/GaAs quantum dots (QD) were grown by atmospheric pressure (AP) metal-organic vapour phase epitaxy (MOVPE) using triethylgallium (TEGa), tertiarybutylarsine (tBAs) and trimethylantimony (TMSb) as gallium (Ga), arsenic (As) and (Sb) sources, respectively. The effect of AP-MOVPE growth parameters on the formation of GaSb QD structures on GaAs was studied. The formation of small, coherent GaSb dots on GaAs improved with decreasing V/III ratios, which were controlled through changing either the TMSb/TEGa ratio at a constant growth temperature or changing the growth temperature at a constant TMSb/TEGa ratio. The maximum effective V/III ratio for dot formation was 0.175. The dot density was more sensitive to growth time than to source mole fraction in the reactor, since time determines the amount of deposited material. The dot density increased with increasing growth time, while the shape and size of the dots were more sensitive to the source vapour mole fraction, which controls the growth rate. Lower mole fractions resulted in smaller sized dots with a more uniform distribution compared to higher mole fractions. Dome-shaped dots with densities as high as 4×1010 cm-2, average base length of 35 nm and average height of 5 nm were achieved. Capping of GaSb QDs at high temperatures caused flattening and the formation of a thin, inhomogeneous GaSb layer inside GaAs. No obvious QD photoluminescence (PL) peak was detected for these samples. A two stage process for capping the dots (involving growth of a low temperature GaAs cap, followed by a high temperature cap) led to the retention of the dot-like features in/on a wetting layer (WL) of GaSb and distinct PL peaks for both the QDs and WL. An increase in excitation power during PL measurements for this particular sample caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending, leading to triangular potential wells, typical for type II band alignment between GaAs and strained GaSb. Variable temperature PL measurements showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the measurement temperature increased. A detailed high resolution transmission electron microscopy analysis was performed to study the morphology and chemical interaction between GaAs and GaSb regions for capped GaSb/GaAs QDs. The capped dots had dimensions similar to those of uncapped dots and had a higher concentration of Sb at their center, with the periphery being intermixed with GaAs. Measurement of lattice strain performed inside these dots revealed the strain to be distributed inhomogenously throughout the dot area. The effect of GaAs host matrix on excitonic behaviour in AP-MOVPE grown GaSb/GaAs quantum dots was investigated. Room temperature (RT) PL emission was achieved from a single layer of quantum dots by controlling the GaAs host matrix growth temperature. These samples were prepared using a GaSb dot growth temperature of 530 °C, followed by growth of a thin GaAs ‘cold’ cap, before depositing the final part of the GaAs capping layer at either 550 °C, 600 °C or 650 °C. PL measurements at 10 K revealed QD emission peaks for all the samples at around 1.1 eV. However, variable temperature PL revealed different thermal quenching rates of the emission, with the rates of quenching reduced with increasing GaAs growth temperature. This was ascribed to reduced defect densities in GaAs grown at higher temperature, which resulted in QD emission even at RT. This RT emission peaked at approximately 1 eV. The hole localisation energy determined for these samples at RT was approximately 470 meV.
- Format
- xi, 105 leaves
- Format
- Publisher
- Nelson Mandela University
- Publisher
- Faculty of Science
- Language
- English
- Rights
- Nelson Mandela University
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| Thumbnail | File | Description | Size | Format | |||
|---|---|---|---|---|---|---|---|
| View Details Download | SOURCE1 | Ngcali Tile.pdf | 3 MB | Adobe Acrobat PDF | View Details Download |